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DMP2104LP
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
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P-Channel MOSFET
Very Low On-Resistance
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
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Case: DFN1411-3
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish - NiPdAu over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.003 grams (approximate)
DFN1411-3
S
D
G
TOP VIEW
BOTTOM VIEW
TOP VIEW
Internal Schematic
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
±12
Units
V
V
Continuous Drain Current (Note 1)
T A = 25°C
T A = 70°C
I D
-1.5
-1.2
A
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T j, T STG
Value
500
250
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BV DSS
-20
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V
V GS = 0V, I D = -250 μ A
Zero Gate Voltage Drain Current
Gate-Source Leakage
T J = 25 ° C
T J = 125 ° C
I DSS
I GSS
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-1.0
-5.0
± 100
μ A
nA
V DS = -20V, V GS = 0V
V GS = ± 12V, V DS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 4)
V GS(th)
R DS (ON)
g FS
V SD
-0.45
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92
134
180
3.1
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-1.0
150
200
240
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-0.9
V
m Ω
S
V
V DS = V GS , I D = -250 μ A
V GS = -4.5V, I D = -950mA
V GS = -2.5V, I D = -670mA
V GS = -1.8V, I D = -200mA
V DS = -10V, I D = -810mA
V GS = 0V, I S = -360mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
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320
80
60
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pF
pF
pF
V DS = -16V, V GS = 0V
f = 1.0MHz
Notes:
1.
2.
3.
4.
Device mounted on FR-4 PCB with 1 inch square pads.
No purposefully added lead.
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
DMP2104LP
Document number: DS31091 Rev. 6 - 2
1 of 4
www.diodes.com
November 2007
? Diodes Incorporated
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